FMBT3906(2011) データシートの表示（PDF） - Formosa Technology
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FMBT3906 Datasheet PDF : 10 Pages
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PNP Epitaxial Planar Transistor
FMBT3906
200mA Silicon PNP Epitaxial Planar
Transistor
Features
• High collector-emitterbreakdien voltage.
(BVCEO = -40V@IC=-1.0mA)
• Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
• As complementary type, the NPN transistor FMBT3904 is
recommended
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" dinicates Halogen-free part, ex.FMBT3906-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Formosa MS
Package outline
SOT-23
(B)
(C)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation FR-5 board TA = 25OC
(1)
Derate above 25OC
Thermal resistance
Total device dissipation alumina
substrate(2)
Junction to ambient
TA = 25OC
Derate above 25OC
Thermal resistance
Operating temperature
Junction to ambient
Storage temperature
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
RθJA
PD
PD
RθJA
TJ
TSTG
MIN.
-55
-65
TYP. MAX. UNIT
-40 V
-40 V
-5.0 V
-200 mA
225 mW
1.8 mW/OC
556 OC/W
300 mW
2.4 mW/OC
417
+150
+150
OC/W
oC
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID Issued Date
DS-231113
2008/02/10
Revised Date Revision
2011/07/21
E
Page.
10
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