UMY1N(2015) データシートの表示（PDF） - ROHM Semiconductor
部品番号
コンポーネント説明
メーカー
UMY1N Datasheet PDF : 12 Pages
| |||
EMY1 / UMY1N / FMY1A
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
EMY1/ UMY1N
FMY1A
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1 *2
PD*1 *3
Tj
Tstg
Tr1(PNP) Tr2(NPN) Unit
-60
60
V
-50
50
V
-6
7
V
-150
150
mA
150
mW/Total
300
mW/Total
150
℃
-55 to +150
℃
lElectrical characteristics (Ta = 25°C) <For Tr1(PNP)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
IC = -50μA
IC = -1mA
IE = -50μA
VCB = -60V
VEB = -6V
IC = -50mA, IB = -5mA
VCE = -6V, IC = -1mA
VCE = -12V, IE = 2mA,
f = 100MHz
VCB = -12V, IE = 0mA,
f = 1MHz
Values
Min. Typ. Max.
Unit
-60 -
-
V
-50 -
-
V
-6
-
-
V
-
- -100 nA
-
- -100 nA
-
- -500 mV
120 - 560 -
- 140 - MHz
- 4.0 5.0 pF
lElectrical characteristics (Ta = 25°C) <For Tr2(NPN)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
IC = 50μA
IC = 1mA
IE = 50μA
VCB = 60V
VEB = 7V
IC = 50mA, IB = 5mA
VCE = 6V, IC = 1mA
VCE = 12V, IE = -2mA,
f = 100MHz
Output capacitance
Cob
VCB = 12V, IE = 0A,
f = 1MHz
*1 Each terminal mounted on a referenve land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
Values
Min. Typ. Max.
Unit
60
-
-
V
50
-
-
V
7
-
-
V
-
- 100 nA
-
- 100 nA
-
- 400 V
120 - 560 -
- 180 - MHz
- 2.0 3.5 pF
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20150825 - Rev.003
Share Link: 