UMY1N データシートの表示（PDF） - ROHM Semiconductor
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UMY1N Datasheet PDF : 5 Pages
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Transistors
EMY1 / UMY1N / FMY1A
Emitter common (dual transistors)
EMY1 / UMY1N / FMY1A
!Features
1) Includes a 2SA1037AK and a 2SC2412K transistor in
a EMT or UMT or SMT package.
2) PNP and NPN transistors have common emitters.
3) Mounting cost and area can be cut in half.
!Structure
Epitaxial planar type
PNP / NPN silicon transistor
!Equivalent circuit
EMY1 / UMY1N
(3) (2) (1)
Tr2
Tr1
(4)
(5)/(6)
FMY1A
(3) (4) (5)
R1
Tr2
Tr1
(2)
(1)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Limits
Symbol
Unit
Tr1 Tr2
Collector-base voltage
VCBO
−60
60
V
Collector-emitter voltage
VCEO
−50
50
V
Emitter-base voltage
VEBO
−6
7
V
Collector current
Power
EMY1, UMY1N
dissipation FMY1A
IC
−150 150
mA
150 (TOTAL)∗1
PC 300 (TOTAL)∗2 mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55∼+150
°C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
!External dimensions (Units : mm)
EMY1
(4)
(3)
(2)
(5)
(1)
1.2
1.6
ROHM : EMT5
Each lead has same dimensions
Abbreviated symbol : Y1
UMY1N
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : Y1
FMY1A
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : Y1
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