FOA1252A1 データシートの表示（PDF） - Infineon Technologies

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FOA1252A1

2.5 Gbit/s Transimpedance Amplifier

Infineon Technologies 

FOA1252A1

2

Electrical Characteristics

Electrical Characteristics

2.1

Absolute Maximum Ratings

Ambient temperature Tamb = -40 °C … +85 °C

Parameter

Symbol Limit Values

min. max.

Supply voltage

VCC

-0.5

6.0

Junction temperature

Tj

-40

+125

Storage temperature

TS

-40

+150

Relative ambient humidity –

–

85/85

ESD integrity

VESD 500

–

Unit Remarks

V

–

°C –

°C –

%/°C no condensation

V

see note

Note: HBM according to MIL STD 883D, method 3015.7 and ESD Assn. Standard

S5.1-1993

Note: Stresses above the ones listed here may cause permanent damage to the

device. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

2.2

Recommended Operating Conditions

Ambient temperature Tamb = -40 °C … +85 °C

Parameter

Symbol Limit Values

Unit Remarks

min. typ. max.

Supply voltage

Data transmission rate

VCC

+4.5 +5.0 +5.5 V

–

–

– 2.5 – Gbit/s –

Supply current

Thermal resistance

Junction temperature

ICC

– 46.7 – mA –

ΘJA

–

140 –

K/W 1)

Tj

-10 – +125 °C –

1) Junction-to-ambient thermal resistance measurement conditions for packaged device:

PCB area: 10 cm × 10 cm × 1.5 mm; copper area approx. 60%; via holes to ground layer underneath the

device; all pins soldered.

Preliminary Data Sheet

4

1998-07

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