FQD9N08 データシートの表示（PDF） - Fairchild Semiconductor

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FQD9N08

80V N-Channel MOSFET

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TC = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

∆BVDSS

/ ∆TJ

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

VGS = 0 V, ID = 250 µA

80

--

--

V

ID = 250 µA, Referenced to 25°C -- 0.08

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 80 V, VGS = 0 V

VDS = 64 V, TC = 125°C

--

--

1

µA

--

--

10

µA

IGSSF

IGSSR

Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V

Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V

--

--

100

nA

--

-- -100 nA

On Characteristics

VGS(th)

RDS(on)

Gate Threshold Voltage

Static Drain-Source

On-Resistance

gFS

Forward Transconductance

VDS = VGS, ID = 250 µA

2.0 --

4.0

V

VGS = 10 V, ID = 3.7 A

-- 0.16 0.21

Ω

VDS = 30 V, ID = 3.7 A (Note 4) --

3.5

--

S

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 190 250

pF

-- 70

90

pF

-- 13

17

pF

Switching Characteristics

td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 40 V, ID = 9.3 A,

RG = 25 Ω

-- 2.8 15pp ns

-- 28

65

ns

--

9

28

ns

(Note 4, 5)

--

17

45

ns

VDS = 64 V, ID = 9.3 A,

-- 5.9 7.7

nC

VGS = 10 V

-- 1.5

--

nC

(Note 4, 5) --

2.6

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

7.4

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

-- 29.6

A

VSD

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.4 A

--

--

1.5

V

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 9.3 A,

-- 50

--

ns

dIF / dt = 100 A/µs

(Note 4)

--

70

--

nC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.38mH, IAS = 7.4A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 9.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Rev. A2, December 2000

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