FQP60N03L データシートの表示（PDF） - Fairchild Semiconductor
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FQP60N03L Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 10.0 V
8.0 V
6.0 V
102
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
101
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
40
30
V = 5V
GS
20
VGS = 10V
10
※ Note : TJ = 25℃
0
0
40
80
120
160
200
240
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
C
oss
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss gd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
C
rss
500
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175℃
25℃
-55℃
※ Notes :
1.
2.
V25DS0μ=s15PVulse
Test
100
0
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
0.2
175℃ 25℃
※ Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 15V
10
DS
V = 24V
DS
8
6
4
2
※ Note : ID = 60A
0
0
5
10
15
20
25
30
35
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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