FS10ASJ-06F-T13 データシートの表示（PDF） - Renesas Electronics
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FS10ASJ-06F-T13 Datasheet PDF : 7 Pages
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FS10ASJ-06F
Transfer Characteristics (Typical)
40
Tc = 25°C
VDS = 10V
32
Pulse Test
24
16
8
0
0
2
4
6
8
10
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
3
Tch = 25°C
2
f = 1MHz
VGS = 0V
103
7
Ciss
5
3
2
102
7
Coss
5
Crss
310–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
10
Tch = 25°C
ID = 10A
8
6
VDS = 10V
20V
4
40V
2
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
102
7 VDS = 5V
5 Pulse Test
4
3
2
101
7
5
4
3
2
Tc = 25°C
75°C
125°C
100100 2 3 4 5 7 101 2 3 4 5 7 102
Drain Current ID (A)
Switching Characteristics (Typical)
2
102
td(off)
7
5
tf
4
3
2
tr
101
td(on)
7
5
4
3
Tch = 25°C, VDD = 30V
VGS = 10V, RGEN = RGS = 50Ω
2
10–1 2 3 4 5 7 100 2 3 4 5 7 101
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
40
VGS = 0V
Pulse Test
32
Tc = 125°C
24
75°C
16
25°C
8
0
0 0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage VSD (V)
Rev.1.00, Aug.20.2004, page 4 of 6
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