FS30VSJ-3-T11 データシートの表示（PDF） - Renesas Electronics
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FS30VSJ-3-T11 Datasheet PDF : 7 Pages
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FS30VSJ-3
Transfer Characteristics (Typical)
50
Tc = 25°C
VDS = 10V
40
Pulse Test
30
20
10
0
0
2
4
6
8
10
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
104
7
5
Tch = 25°C
f = 1MHz
VGS = 0V
Ciss
3
2
103
7
5
Coss
3
2
Crss
102
7
5
3
2
3
5 7100
23
5 7 101
23
5 7 102
23
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
10
Tch = 25°C
ID = 30A
8
VDS = 50V
6
4
80V
100V
2
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Rev.2.00 Aug 07, 2006 page 4 of 6
Forward Transfer Admittance vs.
Drain Current (Typical)
102
7
5
4
Tc = 25°C
3
2
75°C
125°C
101
7
5
4
3
2
100100
2 3 4 5 7 101
VDS = 10V
Pulse Test
2 3 4 5 7 102
Drain Current ID (A)
Switching Characteristics (Typical)
103
7
Tch = 25°C
VDD = 80V
5
4
td(off)
VGS = 10V
RGEN = RGS = 50Ω
3
2
tf
102
7
5
4
3
tr
td(on)
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
50
VGS = 0V
Pulse Test
40
30
Tc = 125°C
20
10
75°C
25°C
0
0 0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage VSD (V)
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