FSEZ1317A データシートの表示（PDF） - Fairchild Semiconductor

部品番号

コンポーネント説明

メーカー

FSEZ1317A

Primary-Side-Regulation PWM with POWER MOSFET Integrated

Fairchild Semiconductor 

Electrical Characteristics (Continued)

Unless otherwise specified, VDD=15V and TA=25℃.

Symbol

Parameter

Internal MOSFET Section(4)

DCYMAX Maximum Duty Cycle

BVDSS Drain-Source Breakdown Voltage

Conditions Min. Typ. Max. Units

ID=250μA,

VGS=0V

52

65

78

%

700

V

∆BVDSS/∆TJ Breakdown Voltage Temperature Coefficient

ID=250μA,

Referenced to

TA=25°C

0.53

V/°C

RDS(ON) Static Drain-Source On-Resistance

ID=0.5A,

VGS=10V

13

16

Ω

IS

Maximum Continuous Drain-Source Diode Forward

Current

1

A

IDSS

Drain-Source Leakage Current

VDS=700V,

TA=25°C

VDS=560V,

TA=100°C

10

µA

100 µA

tD-ON

tD-OFF

Turn-On Delay Time

Turn-Off Delay Time

VDS=350V,

ID=1A,

RG=25Ω(5)

10

30

ns

20

50

ns

CISS

Input Capacitance

VGS=0V,

VDS=25V,

fS=1MHz

175 200

pF

COSS

Output Capacitance

23

25

pF

Over-Temperature-Protection Section

TOTP

Threshold Temperature for OTP(6)

+140

°C

Notes:

4. These parameters, although guaranteed, are not 100% tested in production.

5. Pulse test: pulsewidth ≦ 300µs, duty cycle ≦ 2%.

6. When the Over-temperature protection is activated, the power system enter auto-restart mode and output is

disabled.

© 2010 Fairchild Semiconductor Corporation

FSEZ1317A • Rev. 1.0.1

6

www.fairchildsemi.com

Share Link: