FZ1200R33KF2_B5 データシートの表示（PDF） - eupec GmbH

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FZ1200R33KF2_B5

IGBT-Modules

eupec GmbH 

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 1200 R 33 KF2_B5

Charakteristische Werte / Characteristic values

Transistor / Transistor

Einschaltverzögerungszeit (ind. Last)

turn on delay time (inductive load)

Anstiegszeit (induktive Last)

rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)

turn off delay time (inductive load)

Fallzeit (induktive Last)

fall time (inductive load)

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

Kurzschlußverhalten

SC Data

Modulinduktivität

stray inductance module

IC = 1200 A, VCE = 1800V

VGE = ±15V, RG = 2,7 Ω, CGE = 220nF, Tvj = 25°C

VGE = ±15V, RG = 2,7 Ω, CGE = 220nF, Tvj = 125°C

IC = 1200 A, VCE = 1800V

VGE = ±15V, RG = 2,7 Ω, CGE = 220nF, Tvj = 25°C

VGE = ±15V, RG = 2,7 Ω, CGE = 220nF, Tvj = 125°C

IC = 1200 A, VCE = 1800V

VGE = ±15V, RG = 1,8 Ω, CGE = 220nF, Tvj = 25°C

VGE = ±15V, RG = 1,8 Ω, CGE = 220nF, Tvj = 125°C

IC = 1200 A, VCE = 1800V

VGE = ±15V, RG = 1,8 Ω, CGE = 220nF, Tvj = 25°C

VGE = ±15V, RG = 1,8 Ω, CGE = 220nF, Tvj = 125°C

IC = 1200 A, VCE = 1800V, VGE = 15V

RG = 1,5 Ω, CGE = 220 nF, Tvj = 125°C, LS = 40nH

IC = 1200 A, VCE = 1800V, VGE = 15V

RG = 1,8 Ω, CGE = 220 nF, Tvj = 125°C, LS = 40nH

tP ≤ 10µsec, VGE ≤ 15V

TVj≤125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt

Modul-Leitungswiderstand, Anschlüsse - Chip

lead resistance, terminals - chip

TC = 25°C

vorläufige Daten

preliminary data

min. typ. max.

td,on

-

0,70

-

µs

-

0,65

-

µs

tr

-

0,45

-

µs

-

0,48

-

µs

td,off

-

1,90

-

µs

-

2,10

-

µs

tf

-

0,20

-

µs

-

0,20

-

µs

Eon

-

2900

-

mWs

Eoff

-

1600

-

mWs

ISC

-

6000

-

A

LsCE

-

18

-

nH

RCC'+EE'

-

0,12

-

mΩ

Charakteristische Werte / Characteristic values

Diode / Diode

Durchlaßspannung

forward voltage

Rückstromspitze

peak reverse recovery current

Sperrverzögerungsladung

recovered charge

Abschaltenergie pro Puls

reverse recovery energy

IF = 1200 A, VGE = 0V, Tvj = 25°C

IF = 1200 A, VGE = 0V, Tvj = 125°C

IF = 1200 A, - diF/dt = 4600 A/µsec

VR = 1800V, VGE = -10V, Tvj = 25°C

VR = 1800V, VGE = -10V, Tvj = 125°C

IF = 1200 A, - diF/dt = 4600 A/µsec

VR = 1800V, VGE = -10V, Tvj = 25°C

VR = 1800V, VGE = -10V, Tvj = 125°C

IF = 1200 A, - diF/dt = 4600 A/µsec

VR = 1800V, VGE = -10V, Tvj = 25°C

VR = 1800V, VGE = -10V, Tvj = 125°C

min. typ. max.

VF

-

2,80 3,50

V

-

2,80 3,50

V

IRM

-

1250

-

A

-

1350

-

A

Qr

-

710

-

µAs

-

1320

-

µAs

Erec

-

680

-

mWs

-

1400

-

mWs

2 (9)

DB_FZ1200R33KF2 B5_2.0.xls

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