FZT788B データシートの表示（PDF） - Diodes Incorporated.

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FZT788B

15V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Diodes Incorporated. 

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Collector-Base Breakdown Voltage

BVCBO

-15

—

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

-15

—

Emitter-Base Breakdown Voltage

BVEBO

-7

—

Collector-Base Cut-Off Current

ICBO

—

—

Emitter Cut-Off Current

IEBO

—

—

DC Current Gain (Note 11)

500

—

400

—

hFE

300

—

150

—

—

—

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

—

—

Base-Emitter Saturation Voltage (Note 11)

Base-Emitter Turn-On Voltage (Note 11)

Input Capacitance

Output Capacitance

VBE(sat)

—

VBE(on)

—

Cibo

—

Cobo

—

—

—

—

—

—

-0.75

225

25

Current Gain-Bandwidth Product

fT

100

—

Turn-On Time

Turn-Off Time

ton

—

35

toff

—

400

Note:

11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

Max

—

—

—

-100

-100

—

—

—

—

-0.15

-0.25

-0.45

-0.5

-0.9

—

—

—

—

—

—

FZT788B

Unit

V

V

V

nA

nA

—

V

V

V

pF

pF

MHz

ns

ns

Test Condition

IC = -100µA

IC = -10mA

IE = -100µA

VCB = -10V

VEB = -4V

IC = -10mA, VCE = -2V

IC = -1A, VCE = -2V

IC = -2A, VCE = -2V

IC = -6A, VCE = -2V

IC = -0.5A, IB = -2.5mA

IC = -1A, IB = -5mA

IC = -2A, IB = -10mA

IC =- 3A, IB = -50mA

IC = -1A, IB = -5mA

IC = -1A, VCE = -2V

VEB = -0.5V, f = 1MHz

VCB = -10V, f = 1MHz

VCE = -5V, IC = -50mA,

f=50MHz

VCC = -10V, IC = -500mA

IB1 = -IB2 = -50mA

FZT788B

Document number: DS33167 Rev. 4 - 2

4 of 7

www.diodes.com

November 2015

© Diodes Incorporated

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