G2304 データシートの表示（PDF） - GTM CORPORATION

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G2304

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM CORPORATION 

Pb Free Plating Product

CORPORATION ISSUED DATE :2004/10/12

REVISED DATE :2005/03/22B

G2304

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS

RDS(ON)

ID

25V

117m

2.7A

Description

The G2304 provides the designer with the best combination of fast switching, low on-resistance and

cost-effectiveness.

Features

ԦSuper High Dense Cell Design for Extremely Low RDS(ON)

ԦReliable and Rugged

Applications

ԦPower Management in Notebook Computer

ԦPortable Equipment

ԦBattery Powered System.

Package Dimensions

TPU.34)QBDLBHF*

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current3, VGS@4.5V

Continuous Drain Current3, VGS@4.5V

Pulsed Drain Current1,2

Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

Symbol

VDS

VGS

ID @TA=25к

ID @TA=70к

IDM

PD @TA=25к

Tj, Tstg

Thermal Data

Parameter

Thermal Resistance Junction-ambient3 Max.

Symbol

Rthj-a

REF.

A

B

C

D

E

F

Millimeter

Min. Max.

2.70

3.10

2.40

2.80

1.40

1.60

0.35

0.50

0

0.10

0.45

0.55

REF.

G

H

K

J

L

M

Ratings

25

f20

2.7

2.2

10

1.38

0.01

-55 ~ +150

Ratings

90

Millimeter

Min.

Max.

1.90 REF.

1.00

1.30

0.10

0.20

0.40

-

0.85

1.15

0̓

10̓

Unit

V

V

A

A

A

W

W/ć

ć

Unit

ć/W

1/4

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