GAL16V8 データシートの表示（PDF） - Lattice Semiconductor

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GAL16V8

High Performance E2CMOS PLD Generic Array Logic™

Lattice Semiconductor 

GAL16V8

High Performance E2CMOS PLD

Generic Array Logic™

Features

• HIGH PERFORMANCE E2CMOS® TECHNOLOGY

— 3.5 ns Maximum Propagation Delay

— Fmax = 250 MHz

— 3.0 ns Maximum from Clock Input to Data Output

— UltraMOS® Advanced CMOS Technology

• 50% to 75% REDUCTION IN POWER FROM BIPOLAR

— 75mA Typ Icc on Low Power Device

— 45mA Typ Icc on Quarter Power Device

• ACTIVE PULL-UPS ON ALL PINS

• E2 CELL TECHNOLOGY

— Reconfigurable Logic

— Reprogrammable Cells

— 100% Tested/100% Yields

— High Speed Electrical Erasure (<100ms)

— 20 Year Data Retention

• EIGHT OUTPUT LOGIC MACROCELLS

— Maximum Flexibility for Complex Logic Designs

— Programmable Output Polarity

— Also Emulates 20-pin PAL® Devices with Full

Function/Fuse Map/Parametric Compatibility

• PRELOAD AND POWER-ON RESET OF ALL REGISTERS

— 100% Functional Testability

• APPLICATIONS INCLUDE:

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

• ELECTRONIC SIGNATURE FOR IDENTIFICATION

Description

The GAL16V8, at 3.5 ns maximum propagation delay time, com-

bines a high performance CMOS process with Electrically Eras-

able (E2) floating gate technology to provide the highest speed

performance available in the PLD market. High speed erase times

(<100ms) allow the devices to be reprogrammed quickly and ef-

ficiently.

The generic architecture provides maximum design flexibility by

allowing the Output Logic Macrocell (OLMC) to be configured by

the user. An important subset of the many architecture configura-

tions possible with the GAL16V8 are the PAL architectures listed

in the table of the macrocell description section. GAL16V8 devices

are capable of emulating any of these PAL architectures with full

function/fuse map/parametric compatibility.

Unique test circuitry and reprogrammable cells allow complete AC,

DC, and functional testing during manufacture. As a result, Lattice

Semiconductor delivers 100% field programmability and function-

ality of all GAL products. In addition, 100 erase/write cycles and

data retention in excess of 20 years are specified.

Functional Block Diagram

I/CLK

CLK

I

I

I

I

I

I

I

I

Pin Configuration

I

I4

PLCC

I I/CLK Vcc I/O/Q

2

20

18

I/O/Q

I

GAL16V8

I/O/Q

I6

16 I/O/Q

Top View

I

I/O/Q

I8

9

14 I/O/Q

11

13

I GND I/OE I/O/Q I/O/Q

I/CLK

I

I

I

I

I

I

I

I

GND

SOIC

1

20

GAL

5 16V8

Top 15

View

10

11

Vcc

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/OE

8 OLMC

8 OLMC

8 OLMC

8 OLMC

8 OLMC

8 OLMC

8 OLMC

8 OLMC

OE

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/O/Q

I/OE

DIP

I/CLK

I

I

I

I

I

I

I

I

GND

1

20 Vcc

I/O/Q

GAL

16V8

5

I/O/Q

I/O/Q

I/O/Q

15 I/O/Q

I/O/Q

I/O/Q

I/O/Q

10

11 I/OE

Copyright © 2001 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject

to change without notice.

LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.

Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com

May 2001

16v8_08

1

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