GA300TD60S データシートの表示（PDF） - Vishay Semiconductors
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GA300TD60S
Vishay Semiconductors
GA300TD60S Datasheet PDF : 8 Pages
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www.vishay.com
VS-GA300TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile “Half Bridge”
(Standard Speed IGBT), 300 A
Dual INT-A-PAK Low Profile
PRIMARY CHARACTERISTICS
VCES
IC DC at TC = 25 °C
VCE(on) (typical) at 300 A, 25 °C
Speed
600 V
530 A
1.24 V
DC to 1 kHz
Package
Dual INT-A-PAK low profile
Circuit configuration
Half bridge
FEATURES
• Gen 4 IGBT technology
• Standard: optimized for hard switching speed
• Low VCE(on)
• Square RBSOA
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Maximum power dissipation (IGBT)
RMS isolation voltage
VCES
IC (1)
ICM
ILM
IF
VGE
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case
(VRMS t = 1 s, TJ = 25 °C)
600
530
376
800
800
219
145
± 20
1136
636
3500
Note
(1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
UNITS
V
A
V
W
V
Revision: 11-Dec-17
1
Document Number: 93362
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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