GA300TD60S データシートの表示（PDF） - Vishay Semiconductors
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GA300TD60S
Vishay Semiconductors
GA300TD60S Datasheet PDF : 8 Pages
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www.vishay.com
600
500
400
300
200
TJ = 125 °C
TJ = 25 °C
100
0
0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
93362_01
VCE (V)
Fig. 1 - Typical Output Characteristics,
TJ = 25 °C, VGE = 15 V
600
VGE = 12 V
500
VGE = 15 V
VGE = 18 V
VGE = 9 V
400
300
200
100
0
0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25
93362_02
160
VCE (V)
Fig. 2 - Typical Output Characteristics,
TJ = 125 °C
140
120
100
DC
80
60
40
20
0
0
100 200 300 400 500 600
93362_03
IC - Continuous Collector Current (A)
Fig. 3 - Maximum DC IGBT Collector Current vs.
Case Temperature
VS-GA300TD60S
Vishay Semiconductors
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20
400 A
150 A
300 A
40 60 80 100 120 140 160
93362_04
TJ (°C)
Fig. 4 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature,
VGE = 15 V
600
VCE = 20 V
500
400
300
TJ = 125 °C
TJ = 25 °C
200
100
0
4
5
6
7
8
9
10
93362_05
VGE (V)
Fig. 5 - Typical IGBT Transfer Characteristics
5.5
TJ = 25 °C
5.0
4.5
4.0
3.5
3.0
TJ = 125 °C
2.5
0.4 0.5 0.6 0.7 0.8 0.9 1.0
93362_06
IC (mA)
Fig. 6 - Typical IGBT Gate Threshold Voltage
Revision: 11-Dec-17
3
Document Number: 93362
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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