GA300TD60S データシートの表示（PDF） - Vishay Semiconductors
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GA300TD60S
Vishay Semiconductors
GA300TD60S Datasheet PDF : 8 Pages
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www.vishay.com
VS-GA300TD60S
Vishay Semiconductors
150
125
Eoff
100
75
50
Eon
25
0
0
5
10
15
20
25
93362_13
Rg (Ω)
Fig. 13 - Typical IGBT Energy Loss vs. Rg,
TJ = 125 °C, IC = 300 A, VCC = 360 V,
VGE = 15 V, L = 500 μH
300
280
260
240
TJ = 125 °C
220
200
180
160
TJ = 25 °C
140
120
100
100 200 300 400 500 600 700 800 900 1000
93362_15
dIF/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt,
VCC = 400 V, IF = 300 A
10 000
tf
1000
td(off)
tr
td(on)
100
0
5
10
15
20
25
93362_14
Rg (Ω)
Fig. 14 - Typical IGBT Switching Time vs. Rg,
TJ = 125 °C, IC = 300 A, VCC = 360 V,
VGE = 15 V, L = 500 μH
130
120
110
100
90
80
TJ = 125 °C
70
60
50
40
TJ = 25 °C
30
20
10
100 200 300 400 500 600 700 800 900 1000
93362_16
dIF/dt (A/µs)
Fig. 16 - Typical Reverse Recovery Current vs. dIF/dt,
VCC = 400 V, IF = 300 A
22
20
18
16
14
12
TJ = 125 °C
10
8
6
4
TJ = 25 °C
2
0
100 200 300 400 500 600 700 800 900 1000
93362_17
dIF/dt (A/μs)
Fig. 17 - Typical Reverse Recovery Charge vs. dIF/dt,
VCC = 400 V, IF = 300 A
Revision: 11-Dec-17
5
Document Number: 93362
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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