GA300TD60S データシートの表示（PDF） - Vishay Semiconductors

部品番号

コンポーネント説明

メーカー

GA300TD60S

Dual INT-A-PAK Low Profile “Half Bridge” (Standard Speed IGBT), 300 A

Vishay Semiconductors 

www.vishay.com

1

VS-GA300TD60S

Vishay Semiconductors

0.1

D = 0.50

0.01

D = 0.20

D = 0.10

D = 0.05

D = 0.02

D = 0.01

DC

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

93362_18

t1 - Rectangular Pulse Duration (s)

Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)

1

0.1

D = 0.50

D = 0.20

D = 0.10

D = 0.05

0.01

D = 0.02

D = 0.01

DC

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

93362_19

t1 - Rectangular Pulse Duration (s)

Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics (Diode)

ORDERING INFORMATION TABLE

Device code

G A 300 T D 60 S

1

2

3

4

5

6

7

1 - Insulated gate bipolar transistor (IGBT)

2 - A = Gen 4 IGBT

3 - Current rating (300 = 300 A)

4 - Circuit configuration (T = half bridge)

5 - Package indicator (D = dual INT-A-PAK low profile)

6 - Voltage rating (60 = 600 V)

7 - Speed / type (S = standard speed IGBT)

Revision: 11-Dec-17

6

Document Number: 93362

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: