GBPC3510W-E4(2008) データシートの表示（PDF） - Vishay Semiconductors
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GBPC3510W-E4 Datasheet PDF : 5 Pages
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GBPC12, GBPC15, GBPC25 & GBPC35
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
005
01
GBPC12, 15, 25, 35
02
04
06
08
UNIT
10
GBPC12 IF = 6.0 A
Maximum instantaneous GBPC15 IF = 7.5 A
forward drop per diode
GBPC25 IF = 12.5 A
VF
GBPC35 IF = 17.5 A
1.1
V
Maximum reverse DC current at rated TA = 25 °C
DC blocking voltage per diode
TA = 125 °C
IR
Typical junction capacitance per diode 4 V, 1 MHz
CJ
5.0
500
µA
300
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
GBPC12, 15, 25, 35
SYMBOL
UNIT
005
01
02
04
06
08
10
Typical thermal resistance (1)
GBPC12-25
GBPC35
RθJC
1.9
1.4
°C/W
Notes:
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
GBPC1206-E4/51
15.79
51
GBPC1506-E4/51
15.79
51
GBPC2506-E4/51
15.79
51
GBPC3506-E4/51
15.79
51
GBPC1206W-E4/51
13.8
51
GBPC1506W-E4/51
13.8
51
GBPC2506W-E4/51
13.8
51
GBPC3506W-E4/51
13.8
51
BASE QUANTITY
100
100
100
100
100
100
100
100
DELIVERY MODE
Paper box
Paper box
Paper box
Paper box
Paper box
Paper box
Paper box
Paper box
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88612
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 15-Apr-08
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