GBPC601-E4-51(2013) データシートの表示（PDF） - Vishay Semiconductors
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GBPC601-E4-51 Datasheet PDF : 4 Pages
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GBPC6005, GBPC601, GBPC602, GBPC604, GBPC606, GBPC608, GBPC610
www.vishay.com
Vishay General Semiconductor
100
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
100
0.1
0.01
0.4
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
50 - 400 V
600 - 1000 V
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
1000
100
10
TA = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
100
10
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style GBPC6
Hole For #6 Screw
0.158
0.142
(4.01)
(3.61)
DIA.
0.630 (16.00)
0.590 (14.98)
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
0.128 (3.25)
0.048 (1.22)
0.042
0.038
(1.07)
(0.96)
DIA.
AC
0.445 (11.30)
0.405 (10.29)
AC
0.094 (2.4) x 45°
0.040 (1.02) TYP.
0.750 (19.05)
MIN.
0.200 (5.08)
0.160 (4.06)
Polarity shown on side of case: Positive lead by beveled corner
Revision: 08-Jul-13
3
Document Number: 88613
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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