GF6968A データシートの表示（PDF） - General Semiconductor

部品番号

コンポーネント説明

メーカー

GF6968A

Common-Drain Dual N-Channel MOSFET

General Semiconductor 

GF6968A

Common-Drain Dual N-Channel MOSFET

T F REENNCHET®

G TSSOP-8

Low VGS(th) VDS 20V RDS(ON) 22mΩ ID 6.2A

New Product

D S2 S2 G2

8 76 5

0.122 (3.10)

0.114 (2.90)

0.005 (0.127)

8

5

0.177 (4.50)

0.170 (4.30)

0.028 (0.70)

0.020 (0.50)

0.260 (6.60)

0.244 (6.20)

1

4

0.025 (0.65)

0.012 (0.30)

0.010 (0.25)

0°– 8°

0.006 (0.15)

0.002 (0.05)

0.047 (1.20)

0.041 (1.05)

Dimensions in inches

and (millimeters)

1 23 4

D S1 S1 G1

0.260 (6.60) min.

0.028 (0.70)

0.020 (0.50)

0.204 (5.20)

0.012 (0.30)

0.010 (0.25)

0.025 (0.65)

Mounting Pad Layout

Mechanical Data

Case: TSSOP-8 Package

Terminals: Leads solderable per MIL-STD-750,

Method 2026

High temperature soldering guaranteed:

250°C/10 seconds at terminals

Mounting Position: Any

Weight: 0.5g

Features

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low

On-Resistance

• Specially Designed for Li-ion battery packs use

• Designed for battery-switch applications

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150°C)(1)

Pulsed Drain Current

Maximum Power Dissipation(1)

TA = 25°C

TA = 70°C

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient(1) Thermal Resistance

VDS

VGS

ID

IDM

PD

TJ, Tstg

RθJA

20

± 12

6.2

30

1.5

0.96

–55 to 150

83

Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec.

Unit

V

A

A

W

°C

°C/W

4/11/01

Share Link: