GF6968A データシートの表示（PDF） - General Semiconductor
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GF6968A Datasheet PDF : 5 Pages
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GF6968A
Common-Drain Dual N-Channel MOSFET
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current(1)
Drain-Source On-State Resistance(1)
Forward Transconductance(1)
Dynamic
BVDSS VGS = 0V, ID = 250µA
20
VGS(th) VDS = VGS, ID = 250µA
0.6
IGSS
VGS = ± 12V, VDS = 0V
–
IDSS
VDS = 20V, VGS = 0V
–
ID(on)
VDS ≥ 5V, VGS = 4.5V
30
VGS = 4.5V, ID = 6.2A
–
RDS(on)
VGS = 2.5V, ID = 5.3A
–
gfs
VDS = 10V, ID = 6.2A
–
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Qg
–
Qgs
VDS = 10V, VGS = 4.5V
–
Qgd
ID = 6.2A
–
td(on)
–
VDD = 10V, RL = 10Ω
tr
–
ID = 1A, VGEN = 4.5V
td(off)
–
RG = 6Ω
tf
–
Ciss
–
Coss
VDS = 10V, VGS = 0V
–
f = 1.0 MHz
Crss
–
Maximum Diode Forward Current
Diode Forward Voltage
IS
—
–
VSD
IS = 6.2A, VGS = 0V
–
Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
Typ
Max
–
–
–
–
–
±100
–
1
–
–
17.5
22
25
30
26.5
–
14
20
2.2
–
3
–
11
30
15
50
43
100
22
50
1240
–
200
–
120
–
–
1.7
0.8
1.2
Unit
V
V
nA
µA
A
mΩ
S
nC
ns
pF
A
V
Switching
Test Circuit
VIN
VGEN
RG
G
VDD
RD
D
VOUT
DUT
S
Switching
Waveforms
td(on)
ton
tr
td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
50%
10%
INVERTED
90%
50%
PULSE WIDTH
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