GF6968AD
N-Channel Enhancement-Mode MOSFET Die
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
0.08
ID = 6A
0.06
0.04
TJ = 125°C
0.02
25°C
Fig. 7 – Gate Charge
5
VDS = 10V
ID = 6A
4
3
2
1
0
1
1800
1500
1200
900
600
300
0
0
2
3
4
5
VGS -- Gate-to-Source Voltage (V)
Fig. 8 – Capacitance
f = 1MHZ
VGS = 0V
Ciss
Coss
Crss
4
8
12
16
20
VDS -- Drain-to-Source Voltage (V)
0
0
2
4
6
8 10 12 14 16
Qg -- Gate Charge (nC)
Fig. 9 – Source-Drain Diode
Forward Voltage
100
VGS = 0V
10
1
TJ = 125°C
25°C
0.1
--55°C
0.01
0
0.2 0.4 0.6 0.8
1
1.2 1.4
VSD -- Source-to-Drain Voltage (V)