GF6968AD
N-Channel Enhancement-Mode MOSFET Die
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage vs.
Junction Temperature
31
ID = 250µA
30
29
28
27
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
50
Single Pulse
40
RθJA = 82°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1
10
100
Pulse Duration (sec.)
Fig. 11 – Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01 0.01
Single Pulse
0.001
0.0001 0.001 0.01
t1
t2
1. Duty Cycle, D = t1/t2
2. RθJA (t) = RθJA(norm) *RθJA
3. RθJA = 82°C/W (on 1-in2
2 oz. Cu. FR-4)
4. TJ - TA = PDM * RθJA (t)
0.1
1
10
100
Pulse Duration (sec.)
Fig. 13 – Maximum Safe Operating Area
100
10
RDS(ON) Limit
1
10ms
100ms
1s
100µs
1ms
10s
0.1
VGS = 4.5V
DC
Single Pulse
on 1-in2 2oz Cu.
TA = 25°C
0.01
0.1
1
10
100
VDS -- Drain-Source Voltage (V)