GF4435 データシートの表示（PDF） - General Semiconductor

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GF4435

P-Channel Enhancement-Mode MOSFET

General Semiconductor 

GF4435

P-Channel Enhancement-Mode MOSFET

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

Gate-Body Leakage

VGS(th)

IGSS

VDS = VGS, ID = –250µA

VDS = 0V, VGS = ±20V

–1.0

–

–

– 3.0

V

–

± 100

nA

Zero Gate Voltage Drain Current

On-State Drain Current(1)

IDSS

VDS = –30V, VGS = 0V

–

–

–1.0

µA

ID(on) VDS ≥ –5V, VGS = –10V

–40

–

–

A

Drain-Source Breakdown Voltage

BVDSS VGS = 0V, ID = –250µA

–30

–

–

V

Drain-Source On-State Resistance(1)

Forward Transconductance(1)

RDS(on) VGS = –10V, ID = –8.0A

–

15.3

20

mΩ

VGS = –4.5V, ID = –5.0A

–

25.3

35

gfs

VDS = –15V, ID = –8.0A

–

22

–

S

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

–

54

60

VDS = –15V, VGS = –10V

Qgs

–

8.5

–

nC

ID = –4.6A

Qgd

–

10.3

–

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

td(on)

–

VDD = –15V, RL = 15Ω

tr

–

ID ≈ –1A, VGEN = –10V

td(off)

–

RG = 6Ω

tf

–

24

30

12

30

ns

78

120

37

80

Input Capacitance

Ciss

VGS = 0V

–

2520

–

Output Capacitance

Coss

VDS = –15V

–

490

–

pF

Reverse Transfer Capacitance

Crss

f = 1.0MHZ

–

335

–

Source-Drain Diode

Maximum Diode Forward Current

IS

–

–

–2.1

A

Diode Forward Voltage

VSD

IS = –2.1A, VGS = 0V

–

–0.75 –1.2

V

Note:

(1) Pulse test; pulse width ≤ 300 µs,

duty cycle ≤ 2%

Switching

Test Circuit

VIN

VDD

RD

D

VOUT

Switching

Waveforms

td(on)

ton

tr

td(off)

90%

toff

tf

90 %

VGEN

RG

DUT

G

S

Output, VOUT

Input, VIN 10%

10%

50%

10%

INVERTED

90%

50%

PULSE WIDTH

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