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GF4435 データシートの表示(PDF) - General Semiconductor

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GF4435
GE
General Semiconductor GE
GF4435 Datasheet PDF : 5 Pages
1 2 3 4 5
GF4435
P-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
50
VGS =
--10V
--6.0V
--5.0V
40
--4.5V
30
--4.0V
20
--3.5V
10
--3V
0
0
1
2
3
4
5
--VDS -- Drain-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
2.4
2.2
2
ID = --250µA
1.8
1.6
1.4
1.2
--50 --25 0
25 50
75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance
vs. Junction Temperature
1.6
VGS = --10V
ID = --8.0A
1.4
Fig. 2 – Transfer Characteristics
50
VDS = --10V
40
30
20
10
0
1
0.06
0.055
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0
TJ = 125°C
25°C
--55°C
2
3
4
5
6
-- VGS -- Gate-to-Source Voltage (V)
Fig. 4 – On-Resistance
vs. Drain Current
VGS = --4.5V
VGS = --10V
10
20
30
40
50
-- ID -- Drain Current (A)
1.2
1
0.8
0.6
--50 --25 0
25 50
75 100 125 150
TJ -- Junction Temperature (°C)

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