GF4435 データシートの表示（PDF） - General Semiconductor
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GF4435 Datasheet PDF : 5 Pages
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GF4435
P-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
35
ID = --250 A
34
Fig. 11 – Transient Thermal
Impedance
33
32
31
--50 --25 0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100
Fig. 13 – Maximum Safe Operating Area
100
10
RDS(ON) Limit
100µs
1ms
10ms
100ms
1s
1
10s
0.1
VGS = 10V
DC
Single Pulse
on 1-in2 2oz Cu.
TA = 25°C
0.01
0.1
1
10
100
VDS -- Drain-Source Voltage (V)
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