GF4450
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
0.04
ID = 7.5A
0.03
0.02
TJ = 125°C
0.01
25°C
Fig. 7 – Gate Charge
10
VDS = 30V
ID = 7.5A
8
6
4
2
0
2
4
6
8
10
VGS -- Gate-to-Source Voltage (V)
Fig. 8 – Capacitance
4000
3500
f = 1MHz
VGS = 0V
Ciss
3000
2500
2000
1500
1000
500
Coss
Crss
0
0
10
20
30
40
50
60
VDS -- Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
60
70
Qg -- Gate Charge (nC)
Fig. 9 – Source-Drain Diode
Forward Voltage
100
VGS = 0V
10
1
TJ = 125°C
0.1
0.01
0
25°C
--55°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD -- Source-to-Drain Voltage (V)