GMF05C-HS3 データシートの表示（PDF） - Vishay Semiconductors
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GMF05C-HS3 Datasheet PDF : 8 Pages
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GMF05C-HS3
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
GMF05C-HS3
BiAs mode: each input (pin 1; 3 - pin 6) to ground (pin 2)
Parameter
Test conditions/remarks
Symbol
Min.
Typ.
Max.
Unit
Protection paths
number of line which can be protected
N lines
5
lines
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IR = 1 µA
at VR = VRWM = 5 V
at IR = 1 mA
at IPP = 12 A acc. IEC 61000-4-5
at IPP = 1 A acc. IEC 61000-4-5
at IF = 12 A acc. IEC 61000-4-5
at IPP = 1 A acc. IEC 61000-4-5
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
VRWM
5
V
IR
< 0.1
1
µA
VBR
6
8
V
VC
12.5
V
VC
7.8
9.5
V
VF
5.5
V
VF
1.5
V
CD
126
150
pF
CD
76
pF
If a higher surge current or Peak Pulse current (IPP) is needed, some protection diodes in the GMF05C-HS3
can also be used in parallel in order to "multiply" the performance.
If two diodes are switched in parallel you get
• double surge power = double peak pulse current (2 x IPPM)
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line Capacitance (2 x CD)
• double Reverse leakage current (2 x IR)
L1
L2
1
6
2
5
L3
3
4
20740
Document Number 85654
Rev. 1.8, 23-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
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