GMF05C-HS3 データシートの表示（PDF） - Vishay Semiconductors
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GMF05C-HS3 Datasheet PDF : 8 Pages
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GMF05C-HS3
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
120 %
100 %
Rise time = 0.7 ns to 1 ns
80 %
60 %
53 %
40 %
27 %
20 %
0%
- 10 0 10 20 30 40 50 60 70 80 90 100
20557
Time (ns)
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
100 %
8 µs to 100 %
80 %
60 %
40 %
20 µs to 50 %
20 %
0%
0
20548
10
20
30
40
Time (µs)
Figure 2. 8/20 µs Peak Pulse Current Wave Form
(acc. IEC 61000-4-5)
140
f = 1 MHz
120
100
BiAs-mode
80
60
40
20
0
0123456
21204
VR (V)
Figure 3. Typical Capacitance CD vs. Reverse Voltage VR
100
BiAs-mode
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
21205
VF (V)
Figure 4. Typical Forward Current IF vs. Forward Voltage VF
7
6
5
4
BiAs-mode
3
2
1
0
0.01 0.1 1
10 100 1000 10000
21206
IR (µA)
Figure 5. Typical Reverse Voltage VR vs.
Reverse Current IR
14
12
BiAs-mode
10
8
6
VC
Measured
4 acc. IEC 61000-4-5
(8/20 µs - wave form)
2
0
0 2 4 6 8 10 12 14 16
21207
IPP (A)
Figure 6. Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
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4
For technical support, please contact: ESD-Protection@vishay.com
Document Number 85654
Rev. 1.8, 23-Sep-08
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