HUF76113T3ST データシートの表示（PDF） - Fairchild Semiconductor

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HUF76113T3ST

4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Fairchild Semiconductor 

Data Sheet

HUF76113T3ST

June 2003

4.7A, 30V, 0.031 Ohm, N-Channel, Logic

Level UltraFET Power MOSFET

This N-Channel power MOSFET is

® manufactured using the innovative

UltraFET process. This advanced

process technology achieves the

lowest possible on-resistance per silicon area, resulting in

outstanding performance. This device is capable of

withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators, switching

converters, motor drivers, relay drivers, low-voltage bus

switches, and power management in portable and battery-

operated products.

Formerly developmental type TA76113.

Ordering Information

PART NUMBER

HUF76113T3ST

PACKAGE

SOT-223

BRAND

76113

NOTE: HUF76113T3ST is available only in tape and reel.

Features

• Logic Level Gate Drive

• 4.7A, 30V

• Ultra Low On-Resistance, rDS(ON) = 0.031Ω

• Temperature Compensating PSPICE® Model

• Temperature Compensating SABER™ Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

SOT-223

GATE

DRAIN

SOURCE

DRAIN

(FLANGE)

©2003 Fairchild Semiconductor Corporation

HUF76113T3ST Rev. B2

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