HUF76113T3ST データシートの表示（PDF） - Fairchild Semiconductor

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HUF76113T3ST

4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Fairchild Semiconductor 

HUF76113T3ST

Typical Performance Curves (Continued)

30

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

25 VDD = 15V

20

15

10

150oC

5

25oC

-55oC

0

0

1

2

3

4

5

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS

30

25

VGS = 10V

VGS = 5V

VGS = 4V

20

VGS = 3.5V

15

10

5

0

0

VGS = 3V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

TA = 25oC

1

2

3

4

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 8. SATURATION CHARACTERISTICS

80

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

70

60

ID = 4.7A

50

40

ID = 0.5A

30

20

2

4

6

8

10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.2

VGS = VDS, ID = 250µA

1.1

1.0

0.9

0.8

0.7

0.6

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

1.8

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.6 VGS = 10V, ID = 4.7A

1.4

1.2

1.0

0.8

0.6

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

ID = 250µA

1.1

1.0

0.9

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

©2003 Fairchild Semiconductor Corporation

HUF76113T3ST Rev. B2

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