GS881E18BD-150IV データシートの表示（PDF） - Giga Semiconductor

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GS881E18BD-150IV

512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs

Giga Semiconductor 

TQFP Pin Description

Symbol

A0, A1

A

DQA

DQB

DQC

DQD

NC

BW

BA, BB, BC, BD

NC

CK

GW

E2

E1

G

ADV

ADSP, ADSC

ZZ

TMS

TDI

TDO

TCK

FT

LBO

VDD

VSS

VDDQ

Type

I

I

I/O

—

I

I

—

I

I

I

I

I

I

I

I

I

I

O

I

I

I

I

I

I

GS881E18/32/36B(T/D)-xxxV

Description

Address field LSBs and Address Counter preset Inputs

Address Inputs

Data Input and Output pins

No Connect

Byte Write—Writes all enabled bytes; active low

Byte Write Enable for DQ Data I/Os; active low

No Connect

Clock Input Signal; active high

Global Write Enable—Writes all bytes; active low

Chip Enable; active high

Chip Enable; active low

Output Enable; active low

Burst address counter advance enable; active low

Address Strobe (Processor, Cache Controller); active low

Sleep Mode control; active high

Scan Test Mode Select

Scan Test Data In

Scan Test Data Out

Scan Test Clock

Flow Through or Pipeline mode; active low

Linear Burst Order mode; active low

Core power supply

I/O and Core Ground

Output driver power supply

Rev: 1.00 6/2006

5/36

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2006, GSI Technology

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