H11D2300 データシートの表示（PDF） - Fairchild Semiconductor

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H11D2300

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

Fairchild Semiconductor 

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting

diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

FEATURES

• High Voltage

- H11D1, H11D2, BVCER = 300 V

- H11D3, H11D4, BVCER = 200 V

• High isolation voltage

- 5300 VAC RMS - 1 minute

- 7500 VAC PEAK - 1 minute

• Underwriters Laboratory (UL) recognized File# E90700

H11D1

H11D2

H11D3

H11D4

4N38

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls

ANODE 1

CATHODE 2

N/C 3

ABSOLUTE MAXIMUM RATINGS

Parameter

TOTAL DEVICE

Storage Temperature

Operating Temperature

Lead Solder Temperature

Total Device Power Dissipation @ TA = 25°C

Derate above 25°C

EMITTER

*Forward DC Current

*Reverse Input Voltage

*Forward Current - Peak (1µs pulse, 300pps)

*LED Power Dissipation @ TA = 25°C

Derate above 25°C

6 BASE

5 COLLECTOR

4 EMITTER

Symbol

TSTG

TOPR

TSOL

PD

IF

VR

IF(pk)

PD

Value

-55 to +150

-55 to +100

260 for 10 sec

260

3.5

80

6.0

3.0

150

1.41

Units

°C

°C

°C

mW

mW/°C

mA

V

A

mW

mW/°C

8/9/00 200046A

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