H3279 データシートの表示（PDF） - Shantou Huashan Electronic Devices
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H3279 Datasheet PDF : 2 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
H3279
█ STROBE FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-92
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………750mW
VCBO——Collector-Base Voltage………………………………30V
VCEO——Collector-Emitter Voltage……………………………10V
VEBO——Emitter-Base Voltage………………………………6V
IC——Collector Current……………………………………2A
ICP——Collector Current（Pulse）…………………………………5A
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
30
V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage
10
V IC=10mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
6
V IE=1mA，IC=0
HFE(1) DC Current Gain
140
600
VCE=-1V, IC=-500mA
HFE(2)
70
VCE=1V, IC=2A
VCE(sat) Collector- Emitter Saturation Voltage
0.5 V IC=2A, IB=50mA
VBE Base-Emitter Voltage
1.5 V VCE=1V, IC=2A
ICBO Collector Cut-off Current
100 nA VCB=30V, IE=0
ICEO Collector Cut-off Current
100 nA VCE=10V, IB=0
IEBO Emitter Cut-off Current
100 nA VEB=6V, IC=0
fT
Current Gain-Bandwidth Product
150
MHz VCE=1V, IC=0.5A
Cob Output Capacitance
27
pF VCB=10V, IE=0，f=1MHz
█ hFE Classification
Y
140—280
GR
200—400
BL
300—600
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