H4422S データシートの表示（PDF） - Hi-Sincerity Mocroelectronics
部品番号
コンポーネント説明
メーカー
H4422S Datasheet PDF : 5 Pages
| |||
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200907
Issued Date : 2009.03.09
Revised Date :
Page No. : 1/5
H4422S
N-Channel Enhancement-Mode MOSFET (30V, 11A)
•
8-Lead Plastic SO-8
Package Code: S
Features
• RDS(on)=13.5mΩ@VGS=10V, ID=11A
• RDS(on)=24mΩ@VGS=4.5V, ID=5A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
H4422S Symbol & Pin Assignment
5
4
Pin 1 / 2 / 3: Source
6
3 Pin 4: Gate
7
2 Pin 5 / 6 / 7 / 8: Drain
8
1
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current (Continuous)
IDM
Drain Current (Pulsed) *1
PD
Total Power Dissipation @TA=25oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
30
±20
11
50
2.5
-55 to +150
50
Units
V
V
A
A
W
°C
°C/W
H4422S
HSMC Product Specification
Share Link: 