RMLA00400 データシートの表示（PDF） - Raytheon Company
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RMLA00400 Datasheet PDF : 5 Pages
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RMLA00400
40 Gb/s Transimpedance Amplifier
ADVANCED INFORMATION
Description
The Raytheon RF Components RMLA00400 is a very high speed Transimpedance Amplifier (TIA) MMIC for 40 Gb/s
(OC768) fiber optic systems. It is available in die form, and is manufactured using Raytheon RF Components’
advanced MHEMT process. The TIA is used in conjunction with a photodetector to convert optical signals into a
voltage output, or as a general purpose low noise wideband gain stage.
Features
MHEMT
High bandwidth: 40 GHz
Low group delay
Low power dissipation: ~450mW.
Single ended output
DC coupled
Effective wideband gain stage
Chip size 3.71 mm x 1.70 mm
Absolute
Ratings1
Parameter
Supply Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
Symbol
Vd
Pin
Tc
Tstg
Value
Unit
+3.5
V
-10
dBm
-40 to +85
°C
-40 to +100
°C
Electrical
Characteristics2,3
Parameter
Min
Frequency Bandwidth (1 dB)
Frequency Bandwidth (3 dB)
Low frequency Cut-off
Gain
Gain Flatness
Transimpedance
Group Delay
Noise Figure
Typ
40
45
30
16
±0.75
300
30
2.5
Max Unit
GHz
GHz
KHz
dB
dB
Ohms
pS p-p
dB
Parameter
Min Typ
Output Voltage
400
Output Return Loss
15
Quiescent Current
130
Input Noise Current Density
25
Vd
3.5
Vg1
-3.5
Vg2
2.5
Case Operating Temp
-40
Max Unit
mV p-p
dB
mA
pA/ √Hz
V
V
V
+85 °C
www.raytheonrf.com
Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. All parameters met at Tc = 25°C, Vd = 3.5V.
3. Measured in a 50 ohm system.
Characteristic performance data and specifications are subject to change without notice.
Revised November 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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