H7P1002DL データシートの表示（PDF） - Renesas Electronics
部品番号
コンポーネント説明
メーカー
H7P1002DL Datasheet PDF : 9 Pages
| |||
H7P1002DL, H7P1002DS
Main Characteristics
Power vs. Temperature Derating
50
40
30
20
10
0
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Typical Output Characteristics
–20
–10 V
Pulse Test
–8 V
–3.5 V
–15
–5 V
–4 V
–10
–3 V
–5
VGS = –2 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.2
Pulse Test
–1.0
ID = –10 A
–0.8
–0.6
–5 A
–0.4
–0.2
–2 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 3 of 8
Maximum Safe Operation Area
–100
–30
–10
–3
–1
–0.3
OperatiDoCnOiPnpWera=tio1n0(mTcs10=(102s5µh°soCt))
–0.1
this area is
limited by RDS (on)
–0.03
Ta = 25°C
–0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –300 –1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–20
VDS = –10 V
Pulse Test
–15
–10
–5
Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
500
Pulse Test
200
VGS = –4 V
100
50
–10 V
20
10
–1 –2
–5 –10 –20 –50 –100
Drain Current ID (A)
Share Link: 