H9013 データシートの表示（PDF） - Shantou Huashan Electronic Devices
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H9013 Datasheet PDF : 2 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
N PN SILICON TRANSISTOR
H9013
█ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION．
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-92
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………40V
VCEO——Collector-Emitter Voltage……………………………30V
1―Emitter ， E
2―Base， B
3―Collector，C
VEBO ——Emitter -Base Voltage………………………………5V
IC——Collector Current …………………………………… 500mA
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
VBE(ON)
BVCBO
BVCEO
BVEBO
Characteristics
Min
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
７８
４０
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
６００
４０
３０
５
Typ
Max Unit
１００ ｎＡ
１００ ｎＡ
２４６
６００ ｍＶ
１．２ Ｖ
７３０ ｍＶ
Ｖ
Ｖ
Ｖ
Test Conditions
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA，IC=0
█ hFE Classification
E
F
G
H
I
７８—１１２ ９６—１３５ １１２—１６６ １４４—２０２ １７６—２４６
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