Shantou Huashan Electronic Devices Co.,Ltd.
N PN SILICON TRANSISTOR
H9013
█ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………40V
VCEO——Collector-Emitter Voltage……………………………30V
1―Emitter , E
2―Base, B
3―Collector,C
VEBO ——Emitter -Base Voltage………………………………5V
IC——Collector Current …………………………………… 500mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
VBE(ON)
BVCBO
BVCEO
BVEBO
Characteristics
Min
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
78
40
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
600
40
30
5
Typ
Max Unit
100 nA
100 nA
246
600 mV
1.2 V
730 mV
V
V
V
Test Conditions
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA,IC=0
█ hFE Classification
E
F
G
H
I
78—112 96—135 112—166 144—202 176—246