DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HA17723 データシートの表示(PDF) - Hitachi -> Renesas Electronics

部品番号
コンポーネント説明
メーカー
HA17723
Hitachi
Hitachi -> Renesas Electronics Hitachi
HA17723 Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
HA17723/F/P
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
HA17723/P
HA17723F
Unit
Supply voltage
VCC
40
40
V
Input/Output voltage differential Vdiff (IN-O) 40
40
V
Differential input voltage
VIN (diff)
±5
±5
V
Maximum output current
I OUT
150
150
mA
Current from VREF
I REF
15
15
mA
Power dissipation
PT
830 (Note 1)
625 (Note 2)
mW
Operating temperature
Topr
0 to +70 / –20 to +75 0 to +70
°C
Storage temperature
Tstg
–55 to +125
–55 to +125
°C
Notes: 1. Above 25°C derate by 8.3mW/°C
2. Allowable temperature of IC junction part, Tj (max), is as shown below.
Tj (max) = θj - a • Pc (max)+Ta
(θj - a is thermal resistance value during mounting, and Pc (max) is the maximum value of IC
power dissipation.)
Therefore, to keep Tj (max) 125°C, wiring density and board material must be selected
according to the board thermal conductivity ratio shown below.
Be careful that the value of Pc (max) does not exceed that PT.
240
220
SOP14
without compound
200
180
160
140 SOP14
120 using paste
containing
100 compound
80
1
2
3
0.5 1
2
5 10 20
Board thermal conductivity (W/m°C)
(1) Glass epoxy board with 10% wiring density
(2) Glass epoxy board with 30% wiring density
(3) Ceramic board with 96% alumina coefficient
40 mm
Board
0.8 t ceramic or
1.5 t epoxy
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]