HA-5221
Die Characteristics
DIE DIMENSIONS:
72 mils x 94 mils
1840µm x 2400µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
Metallization Mask Layout
SUBSTRATE POTENTIAL (POWERED UP):
V-
TRANSISTOR COUNT:
62
PROCESS:
Bipolar Dielectric Isolation
HA-5221
V-
+IN
-IN
-BAL
+BAL
OUT
V+
10