HEF4516B データシートの表示（PDF） - NXP Semiconductors.
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HEF4516B Datasheet PDF : 16 Pages
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NXP Semiconductors
HEF4516B
Binary up/down counter
0
1
2
3
4
15
5
14
6
13
7
12 11 10
count up
count down
9
8
001aae692
Logic equation for terminal count:
TC = CE • {(UP ⁄ DN) • Q0 • Q1 • Q2 • Q3 + (UP ⁄ DN) • Q0 • Q1 • Q2 • Q3} .
Fig 5. State diagram
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDD
IIK
VI
IOK
II/O
IDD
Tstg
Tamb
Ptot
supply voltage
input clamping current
input voltage
output clamping current
input/output current
supply current
storage temperature
ambient temperature
total power dissipation
VI < −0.5 V or VI > VDD + 0.5 V
VO < −0.5 V or VO > VDD + 0.5 V
DIP16 package
SO16 package
P
power dissipation
per output
[1] For DIP16 package: Ptot derates linearly with 12 mW/K above 70 °C.
[2] For SO16 package: Ptot derates linearly with 8 mW/K above 70 °C.
9. Recommended operating conditions
Min
−0.5
-
−0.5
-
-
-
−65
−40
[1] -
[2] -
-
Max
Unit
+18
V
±10
mA
VDD + 0.5 V
±10
mA
±10
mA
50
mA
+150
°C
+85
°C
750
mW
500
mW
100
mW
Table 5.
Symbol
VDD
VI
Tamb
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
ambient temperature
in free air
Min Typ Max
3
-
15
0
-
VDD
−40 -
+85
Unit
V
V
°C
HEF4516B_6
Product data sheet
Rev. 06 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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