HEF4516B データシートの表示（PDF） - NXP Semiconductors.

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HEF4516B

Binary up/down counter

NXP Semiconductors. 

NXP Semiconductors

HEF4516B

Binary up/down counter

Table 5.

Symbol

Δt/ΔV

Recommended operating conditions …continued

Parameter

Conditions

input transition rise and fall rate

VDD = 5 V

VDD = 10 V

VDD = 15 V

10. Static characteristics

Table 6. Static characteristics

VSS = 0 V; VI = VSS or VDD unless otherwise specified.

Symbol Parameter

Conditions

VDD

VIH

HIGH-level input voltage |IO| < 1 μA

5V

10 V

15 V

VIL

LOW-level input voltage |IO| < 1 μA

5V

10 V

15 V

VOH

HIGH-level output voltage |IO| < 1 μA;

5V

VI = VSS or VDD 10 V

15 V

VOL

LOW-level output voltage |IO| < 1 μA;

5V

VI = VSS or VDD 10 V

15 V

IOH

HIGH-level output current VO = 2.5 V

5V

VO = 4.6 V

5V

VO = 9.5 V

10 V

VO = 13.5 V

15 V

IOL

LOW-level output current VO = 0.4 V

5V

VO = 0.5 V

10 V

VO = 1.5 V

15 V

II

input leakage current

VDD = 15 V

15 V

IDD

supply current

IO = 0 A;

VI = VSS or VDD

5V

10 V

15 V

CI

input capacitance

-

Min Typ Max

-

-

3.75

-

-

0.5

-

-

0.08

Unit

μs/V

μs/V

μs/V

Tamb = −40 °C Tamb = 25 °C

Min Max Min Max

3.5

-

3.5

-

7.0

-

7.0

-

11.0

-

11.0

-

-

1.5

-

1.5

-

3.0

-

3.0

-

4.0

-

4.0

4.95

-

4.95

-

9.95

-

9.95

-

14.95 - 14.95 -

- 0.05 - 0.05

- 0.05 - 0.05

- 0.05 - 0.05

−1.7

-

−1.4

-

−0.52 - −0.44 -

−1.3

-

−1.1

-

−3.6

-

−3.0

-

0.52 - 0.44 -

1.3

-

1.1

-

3.6

-

3.0

-

- ±0.3 - ±0.3

-

20

-

20

-

40

-

40

-

80

-

80

-

-

-

7.5

Tamb = 85 °C Unit

Min Max

3.5

-V

7.0

-V

11.0

-V

-

1.5 V

-

3.0 V

-

4.0 V

4.95 - V

9.95 - V

14.95 - V

- 0.05 V

- 0.05 V

- 0.05 V

−1.1 - mA

−0.36 - mA

−0.9 - mA

−2.4 - mA

0.36 - mA

0.9

- mA

2.4

- mA

- ±1.0 μA

-

150 μA

-

300 μA

-

600 μA

-

- pF

HEF4516B_6

Product data sheet

Rev. 06 — 11 December 2009

© NXP B.V. 2009. All rights reserved.

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