HGTG20N60C3 データシートの表示（PDF） - Fairchild Semiconductor
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HGTG20N60C3 Datasheet PDF : 8 Pages
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HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 1mH
Test Circuit (Figure 17)
MIN
TYP
MAX UNITS
-
28
32
ns
-
24
28
ns
-
280
450
ns
-
108
210
ns
-
380
410
µJ
-
1.0
1.1
mJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
EOFF
RθJC
-
1.2
1.7
mJ
-
-
0.76
oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17.
Typical Performance Curves Unless Otherwise Specified
50
VGE = 15V
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
140
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH
120
100
80
60
40
20
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 10Ω,
100
L = 1mH, V CE = 480V
TC VGE
75oC 15V
75oC 10V
110oC 15V
110oC 10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.76oC/W, SEE NOTES
1
2
5
10
20
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
14
VCE = 360V, RG = 10Ω, TJ = 125oC
12
10
450
400
ISC
350
8
300
6
250
4
200
tSC
2
150
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
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