G20N120E2 データシートの表示（PDF） - Intersil
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G20N120E2 Datasheet PDF : 5 Pages
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Specifications HGTG20N120E2
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Emitter Breakdown
Voltage
BVCES IC = 250µA, VGE = 0V
1200
-
-
V
Collector-Emitter Leakage Current
Collector-Emitter Saturation
Voltage
Gate-Emitter Threshold Voltage
ICES
VCE(SAT)
VGE(TH)
VCE = BVCES
VCE = 0.8 BVCES
IC = IC90, VGE = 15V
IC = IC90, VGE = 10V
IC = 500µA,
VCE = VGE
TC = +25oC
TC = +125oC
TC = +25oC
TC = +125oC
TC = +25oC
TC = +125oC
TC = +25oC
-
-
250
µA
-
-
1.0
mA
-
2.9
3.5
V
-
3.0
3.6
V
-
3.1
3.8
V
-
3.3
4.0
V
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
-
7.0
-
V
On-State Gate Charge
QG(ON)
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
-
110
150
nC
-
150
200
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
tD(ON)
tR
tD(OFF)I
RL = 48Ω
L = 50µH
IC = IC90, VGE = 15V,
-
VCE = 0.8 BVCES,
RG = 25Ω,
-
TJ = +125oC
-
100
-
ns
150
-
ns
520
620
ns
Current Fall Time
tFI
-
780 1000
ns
Turn-Off Energy (Note 1)
WOFF
-
7.0
-
mJ
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
tD(ON)
tR
tD(OFF)I
RL = 48Ω
L = 50µH
IC = IC90, VGE = 10V,
-
VCE = 0.8 BVCES,
RG = 25Ω,
-
TJ = +125oC
-
100
-
ns
150
-
ns
420
520
ns
Current Fall Time
tFI
-
780 1000
ns
Turn-Off Energy (Note 1)
Thermal Resistance
WOFF
RθJC
-
7.0
-
mJ
-
0.70
0.83 oC/W
NOTE:
1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTG20N120E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3-99
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