DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HIP0080AM(1998) データシートの表示(PDF) - Intersil

部品番号
コンポーネント説明
メーカー
HIP0080AM Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
HIP0080, HIP0081
HIP0080, HIP0081The Junction-to-Ambient equivalent to
Equation 3, 3A is:
TJ = TA + PD × θJA
(EQ. 5)
HIP0080, HIP0081or:
TA = TJ PD × θJA
(EQ. 5A)
HIP0080, HIP0081Not all Integrated Circuit packages have
a directly definable case temperature because the heat is
spread thru the lead frame to a PC Board which is the
effective heat sink.
Calculation Example 1
HIP0080, HIP0081For the HIP0081, θJC = 3oC/W and the
worst case junction temperature, as an application design
solution, should not exceed 150oC. For a given application,
Equation 1 determines the dissipation, PD.
HIP0080, HIP0081Assume the package is mounted to a
heat sink having a thermal resistance of 6oC/W and, for a
given application, assume the dissipation is 3W and the
9aomCb/iWen. tTtheemspoeluratitounrefo(rTjAu)nicst1io0n0oteCm. pFreormatuErqeu(aTtCio)nb4y, θJA is
Equation 3 is:
HIP0080, HIP0081TJ = 100oC + 3W x 9oC/W = 127oC.
Calculation Example 2:
HIP0080, HIP0081Assume for the HIP0080, θJA = 30oC/W
mounted on a PC Board with good heat sinking
characteristics. Again, the worst case junction temperature,
as an application design solution, should not exceed
150oC. Assume from the application, based on Equation 1,
the dissipation, PD = 1.5W. The maximum junction
temperature is known and can be used to determine the
maximum allowable ambient temperature from Equation 5A
as follows:
HIP0080, HIP0081TA = 150oC - 1.5W x 30oC/W = 105oC.
Equal Current Loading Solution
HIP0080, HIP0081Many applications may have equal
current loading in the output drivers with equal saturated
turn ON and temperature conditions. As such, a convenient
method to show rating boundaries is to substitute the
dissipation Equation 2 into the junction temperature
Equation 3. For m outputs that are ON and conducting with
equal currents, where I = I1 = I2..... = Im, we have the
following solution for dissipation:
PD = m × Pk = m × I2 × rDS(ON)
(EQ. 6)
I = m-------×-----θ---J-T--C--J----×–----Tr---D-C---S----(--O----N-----)
(EQ. 7)
HIP0080, HIP0081The number of output drivers ON and
conducting (m) may be from 1 to n. (i.e., For all four output
drivers of the HIP0081 ON, m = 4.) Maximum temperature,
dissipation and current ratings must be observed. For a
defined number of conducting Power MOS Output Drivers,
we can plot the results for m devices showing I vs TC.
HIP0080, HIP0081Given the HIP0081 as an example,
Figures 6 and Figure 7 illustrate the boundaries for
temperature and current. Figure 6 shows the maximum
current for a single output ON while Figure 7 shows the
maximum current for all four outputs ON with equal current
plotted versus Case Temperature, TC. Boundary conditions
relate to the Absolute Maximum Ratings as defined in the
Data Sheet.
3.0
2.5
MAX. +IOUT(DC)
2.0
1.5
(1)
CURVE (1): rDS(ON) = 1
1.0
(2)
CURVE (2): rDS(ON) = 0.5
0.5
THERMAL RESISTANCE, θJC = 3oC/W
0.0
50
75
100
125
150
CASE (HEAT SINK TAB) TEMPERATURE (oC)
FIGURE 6. HIP0081 MAXIMUM SINGLE OUTPUT CURRENT vs CASE (TAB) TEMPERATURE
10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]