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HIT667-HQ データシートの表示(PDF) - Renesas Electronics

部品番号
コンポーネント説明
メーカー
HIT667-HQ
Renesas
Renesas Electronics Renesas
HIT667-HQ Datasheet PDF : 5 Pages
1 2 3 4 5
HIT667
Main Characteristics
Maximum Collector Dissipation Curve
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
Ambient Temperature Ta (°C)
Preliminary
Typical Output Characteristics
1.0
25 mA 20 mA
15 mA
10 mA
0.8
40 mA
5 mA
35 mA
0.6
30 mA
2 mA
0.4
P
C = 0.9 W
1 mA
0.2
IB = 0.5 mA
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
500
VCE = 5 V
200 Pulse
100
50
Ta = 75°C
20
10
5
2
1
0 0.2 0.4 0.6
25°C
-25°C
0.8 1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
300
250
Ta = 75°C
25°C
200
-25°C
150
100
50 VCE = 5 V
Pulse
0
1
10
100
1000
Collector Current IC (mA)
Base to Emitter & Collector to Emitter
Saturation Voltage vs. Collector Current
1.0
VCE = 10 IB
Pulse
0.8
VBE(sat)
0.20
-25°C
25°C
0.16
Ta = 75°C
0.6
0.12
Ta = 75°C
25°C
0.4
-25°C
0.08
0.2 VCE(sat)
0.04
0
0
1
10
100
1000
Collector Current IC (mA)
R07DS0450EJ0400 Rev.4.00
Jun 14, 2011
Page 3 of 4

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