HIT647-HQ データシートの表示（PDF） - Renesas Electronics

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HIT647-HQ

Silicon PNP Epitaxial

Renesas Electronics 

HIT647

Preliminary

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO –120

—

—

V IC = –100 A, IE = 0

Collector to emitter breakdown voltage V(BR)CEO –100

—

—

V IC = –10 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

–6

—

—

V IE = –100 A, IC = 0

Collector cutoff current

ICBO

—

—

–500

nA VCB = –120 V, IE = 0

Emitter cutoff current

IEBO

—

—

–500

nA VEB = –6 V, IC = 0

DC current transfer ratio

hFE1

140

—

350

— VCE = –2 V, IC = –150 mA

hFE2

40

—

—

— VCE = –5 V, IC = –1 A

Collector to emitter saturation voltage

VCE(sat)

—

—

–0.5

V IC = –500 mA, IB = –50 mA

Base to emitter saturation voltage

VBE(sat)

—

—

–1.1

V IC = –500 mA, IB = –50 mA

R07DS0449EJ0400 Rev.4.00

Jun 14, 2011

Page 2 of 4

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