HIT673 データシートの表示（PDF） - Renesas Electronics

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HIT673

Silicon PNP Epitaxial

Renesas Electronics 

HIT673

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min. Typ Max. Unit

Test Conditions

Collector to base breakdown voltage

V(BR)CBO

–50

—

—

V IC = –10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO –50

—

—

V IC = –0.1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

–5

—

—

V IE = –10 µA, IC = 0

Collector cutoff current

ICBO

—

—

–500 nA VCB = –50 V, IE = 0

Emitter cutoff current

IEBO

—

—

–500 nA VEB = –5 V

DC current transfer ratio

hFE1

60

—

320

— VCE = –3 V, IC = –10 mA

Collector to emitter saturation voltage

VCE(sat)

—

—

–0.6

V IC = -150 mA, IB = –15 mA

Base to emitter voltage

VBE(on)

—

—

–1.2

V VCE = –3V, IC = –10 mA

REJ03G1608-0100 Rev.1.00 Nov 28, 2007

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