HITK0201MPTL-HQ データシートの表示（PDF） - Renesas Electronics

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HITK0201MPTL-HQ

20V, 4.5A, 39mΩmax. Silicon N Channel MOS FET Power Switching

Renesas Electronics 

HITK0201MP

20V, 4.5A, 39mmax.

Silicon N Channel MOS FET

Power Switching

Features

 Low on-resistance

RDS(on) = 25 m typ (VGS = 4.5 V, ID = 2.4 A)

 Low drive current

 High speed switching

 2.5 V gate drive

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

3

1

2

Note: Marking is “QV”.

Preliminary Datasheet

R07DS0479EJ0200

Rev.2.00

May 09, 2013

3

D

G

1. Source

2

2. Gate

3. Drain

S

1

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body - drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

ID(pulse) Note1

IDR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW  10 s, duty cycle  1%

2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)

Ratings

20

12

4.5

15

4.5

0.8

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

C

C

R07DS0479EJ0200 Rev.2.00

May 09, 2013

Page 1 of 6

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